G40H120DF2 IGBT
G40H120DF2 IGBT
G40H120DF2 IGBT
The G40H120DF2 IGBT is a high-efficiency 1200V, 40A Insulated Gate Bipolar Transistor for demanding industrial applications. It is suited to power conversion systems, motor control, inverters, renewable-energy systems, EV drives, industrial automation, and power supplies. Low switching losses help maintain stable and efficient operation.
Technical Specifications
| Type | IGBT |
| Voltage Rating | 1200V |
| Current Rating | 40A |
| Package Type | TO-220 |
| Power Dissipation | 100W |
| Switching Speed | Fast |
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G40H120DF2 IGBT
The G40H120DF2 IGBT is a high-efficiency 1200V, 40A Insulated Gate Bipolar Transistor for demanding industrial applications. It is suited to power conversion systems, motor control, inverters, renewable-energy systems, EV drives, industrial automation, and power supplies. Low switching losses help maintain stable and efficient operation.
Technical Specifications
| Type | IGBT |
| Voltage Rating | 1200V |
| Current Rating | 40A |
| Package Type | TO-220 |
| Power Dissipation | 100W |
| Switching Speed | Fast |
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