6R070 IPP60R070C6 Power MOSFET N-Channel
The IPP60R070C6 is an N-channel power MOSFET for high-voltage switching and power-management designs.
Specifications
- Drain-source voltage: 600V
- Drain current: 22A
- RDS(on): 70mΩ
- Gate threshold: 3–4.5V
- Package: TO-220
- Operating temperature: -55°C to 150°C
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The IPP60R070C6 is an N-channel power MOSFET for high-voltage switching and power-management designs.
Specifications
- Drain-source voltage: 600V
- Drain current: 22A
- RDS(on): 70mΩ
- Gate threshold: 3–4.5V
- Package: TO-220
- Operating temperature: -55°C to 150°C