NSi6801TCD IC


Technical Specifications

Feature Specification
Type N-channel MOSFET
Drain-Source Voltage 80V
Continuous Drain Current 80A
Gate Threshold Voltage 2V to 4V
Rds(on) 15mΩ (max)
Gate Charge (Qg) 75nC
Package TO-220
Applications Power Management, Motor Drives, Industrial Automation, Renewable Energy

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NSi6801TCD IC

The NSi6801TCD IC is a high-performance, N-channel MOSFET designed to handle high-current applications efficiently. Built with cutting-edge technology, the NSi6801TCD provides excellent thermal stability and low on-resistance, making it ideal for use in power management systems, motor drives, and other demanding electronic applications.

This MOSFET offers low gate charge and high-speed switching, enabling faster and more efficient performance in a variety of power electronics circuits. With its compact and durable TO-220 package, it is well-suited for both high-power applications and compact designs. Whether used in consumer electronics, industrial automation, or renewable energy systems, the NSi6801TCD IC MOSFET ensures reliable and long-lasting performance.

The NSi6801TCD’s high efficiency is complemented by its excellent thermal management, providing stable operation even under challenging conditions. Its low Rds(on) ensures minimal power loss, contributing to improved overall system efficiency. This makes the NSi6801TCD a solid choice for high-power applications, ensuring superior performance, reduced heat generation, and increased system longevity.


 

Why Choose Robostan?

  • Genuine Components: Authentic NSi6801TCD MOSFETs for high-power applications.
  • Affordable Pricing: Best value for your electronic component needs.
  • Expert Assistance: Get expert advice on circuit design and application.
  • Fast Shipping: Quick and reliable delivery service across Pakistan.

Price and Availability

  • Price: PKR 300
  • Availability: In stock

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