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YGW75N65F1 IGBT
YGW75N65F1 IGBT
The YGW75N65F1 is an insulated-gate bipolar transistor intended for compatible power-electronics applications, with low switching losses and a TO-220 package.
Technical Specifications
- Type: IGBT
- Voltage Rating: 650V
- Current Rating: 75A
- Power Characteristic: Low switching losses
- Package Type: TO-220
Rs.330.00
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YGW75N65F1 IGBT
The YGW75N65F1 is an insulated-gate bipolar transistor intended for compatible power-electronics applications, with low switching losses and a TO-220 package.
Technical Specifications
- Type: IGBT
- Voltage Rating: 650V
- Current Rating: 75A
- Power Characteristic: Low switching losses
- Package Type: TO-220