HY1920W IGBT
Rs.300.00
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HY1920W IGBT
The HY1920W is an insulated-gate bipolar transistor designed for efficient power-electronics switching, with low conduction losses and high-speed performance.
Technical Specifications
- Voltage rating: 1200V
- Current rating: 40A
- Switching speed: High-speed
- Conduction loss: Low
- Package: TO-247
Rs.300.00
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The HY1920W is an insulated-gate bipolar transistor designed for efficient power-electronics switching, with low conduction losses and high-speed performance.
Technical Specifications
- Voltage rating: 1200V
- Current rating: 40A
- Switching speed: High-speed
- Conduction loss: Low
- Package: TO-247
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