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G80H65DFB IGBT
G80H65DFB is an insulated-gate bipolar transistor designed for high-performance power electronics, with low conduction losses and fast switching characteristics.
Technical Specifications
- Type: IGBT
- Voltage rating: 650V
- Current rating: 80A
- Switching speed: High
- Thermal resistance: Low
Rs.340.00
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G80H65DFB is an insulated-gate bipolar transistor designed for high-performance power electronics, with low conduction losses and fast switching characteristics.
Technical Specifications
- Type: IGBT
- Voltage rating: 650V
- Current rating: 80A
- Switching speed: High
- Thermal resistance: Low