FGY75T65SQDT TO-247 IGBT Transistor
The FGY75T65SQDT is a high-power IGBT transistor in a TO-247 package for power-switching designs.
Specifications
- Collector-emitter voltage: 650V
- Collector current: 75A
- Low saturation voltage
- Gate threshold: approximately 5–7V
- Package: TO-247
- Operating temperature: -55°C to 150°C
Rs.400.00
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The FGY75T65SQDT is a high-power IGBT transistor in a TO-247 package for power-switching designs.
Specifications
- Collector-emitter voltage: 650V
- Collector current: 75A
- Low saturation voltage
- Gate threshold: approximately 5–7V
- Package: TO-247
- Operating temperature: -55°C to 150°C
