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FGY160T65SPD IGBT
The FGY160T65SPD IGBT is a high-performance insulated-gate bipolar transistor designed for demanding power-electronics systems. It combines fast switching characteristics with low conduction losses and a TO-247PLUS package for thermal performance.
Technical Specifications
- Type: IGBT
- Collector-Emitter Voltage: 650V
- Collector Current: 160A
- Power Dissipation: 520W
- Package: TO-247PLUS
Rs.380.00
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The FGY160T65SPD IGBT is a high-performance insulated-gate bipolar transistor designed for demanding power-electronics systems. It combines fast switching characteristics with low conduction losses and a TO-247PLUS package for thermal performance.
Technical Specifications
- Type: IGBT
- Collector-Emitter Voltage: 650V
- Collector Current: 160A
- Power Dissipation: 520W
- Package: TO-247PLUS