TIP42C DARLINGTON PNP Best Price in Pakistan

TIP42C DARLINGTON PNP Best Price in Pakistan. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Value Unit
VCBO Collector-Base Voltage
TIP42 -40
V
TIP42C -100
VCEO Collector-Emitter Voltage
TIP42 -40
V
TIP42C -100
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -6 A
ICP Collector Current (Pulse) -10 A
IB Base Current -2 A
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1 TO-220
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
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2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC
Collector Dissipation (TC = 25°C) 65 W
Collector Dissipation (TA = 25°C) 2
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1)
TIP42
IC = -30 mA, IB = 0
-40
V
TIP42C -100
ICEO Collector Cut-Off Current
TIP42 VCE = -30 V, IB = 0 -0.7
mA
TIP42C VCE = -60 V, IB = 0 -0.7
ICES Collector Cut-Off Current
TIP42 VCE = -40 V, VEB = 0 -400
μA
TIP42C VCE = -100 V, VEB = 0 -400
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -1 mA
hFE DC Current Gain(1) VCE = -4 V, IC = -0.3 A 30
VCE = -4 V, IC = -3 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -6 A, IB = -600 mA -1.5 V
VBE(on) Base-Emitter On Voltage(1) VCE = -4 V, IC = -6 A -2.0 V
fT Current Gain Bandwidth Product VCE = -10 V, IC = -500 mA,
f = 1 MHz 3.0